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PDF BSP170 Data sheet ( Hoja de datos )
| Número de pieza | BSP170 | |
| Descripción | SIPMOS Small-Signal Transistor (P channel Enhancement mode Avalanche rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BSP 170
SIPMOS ® Small-Signal Transistor
• P channel
• Enhancement mode
• Avalanche rated
• VGS(th) = -2.1...-4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
GD S D
Type
BSP 170
Type
BSP 170
VDS
-60 V
ID
-1.7 A
Ordering Code
Q67000-S . . .
RDS(on)
0.35 Ω
Package
SOT-223
Tape and Reel Information
E6327
Marking
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = -1.7 A, VDD = -25 V, RGS = 25 Ω
L = 3.23 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TA = 25 °C
Symbol
ID
IDpuls
EAS
VGS
Ptot
Values
-1.7
-6.8
8
± 20
1.8
Unit
A
mJ
V
W
Semiconductor Group
1
22/05/1997
1 page  
BSP 170
Power dissipation
Ptot = ƒ(TA)
2.0
W
Ptot 1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TA
Drain current
ID = ƒ(TA)
parameter: VGS ≥ -10 V
-1.8
A
ID -1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Transient thermal impedance
Zth JA = ƒ(tp)
parameter: D = tp / T
10 2
K/W
10 1
ZthJC
10 0
10 -1
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
Semiconductor Group
10 -5
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2 10 -1s 10 0
tp
5 22/05/1997
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSP170.PDF ] | |
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