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PDF BUP410D Data sheet ( Hoja de datos )
| Número de pieza | BUP410D | |
| Descripción | IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BUP 410D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Type
BUP 410D
VCE IC
600V 13A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Diode forward current
TC = 90 °C
Pulsed diode current, tp = 1 ms
TC = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-220 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
IF
IFpuls
Ptot
Tj
Tstg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
Q67040-A4425-A2
Values
600
Unit
V
600
± 20
13
8
A
26
16
11
72
50
-55 ... + 150
-55 ... + 150
W
°C
Semiconductor Group
1
Dec-12-1996
1 page  
BUP 410D
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
55
W
Ptot 45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
12
A
10
IC
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 2
A
IC 10 1
tp = 1.4µs
10 µs
10 0
100 µs
1 ms
10 -1
10 ms
DC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 1
K/W
ZthJC
10 0
10 -1
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -2
10 0
10 1
Semiconductor Group
10 2 V 10 3
VCE
5
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Dec-12-1996
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BUP410D.PDF ] | |
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