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PDF BUP410 Data sheet ( Hoja de datos )
| Número de pieza | BUP410 | |
| Descripción | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUP410 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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BUP 410
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Type
BUP 410
VCE IC
600V 13A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Avalanche energy, single pulse
IC = 6 A, VCC = 50 V, RGE = 25 Ω
L = 500 µH, Tj = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-220 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
EAS
Ptot
Tj
Tstg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
C67040-A4424-A2
Values
600
Unit
V
600
± 20
13
8
A
26
16
mJ
9
50
-55 ... + 150
-55 ... + 150
W
°C
Semiconductor Group
1
Jul-31-1996
1 page  
BUP 410
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
12
A
10
IC
9
8
17V
15V
13V
11V
9V
7V
7
6
5
4
3
2
1
0
0 1 2 3V5
VCE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
12
A
10
IC
9
8
17V
15V
13V
11V
9V
7V
7
6
5
4
3
2
1
0
0 1 2 3V5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
12
A
10
IC
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 V 14
VGE
Semiconductor Group
5
Jul-31-1996
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUP410.PDF ] | |
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