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PDF SSFM3008L Data sheet ( Hoja de datos )
| Número de pieza | SSFM3008L | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
30V
RDS(on) 5.0mohm(typ.)
ID 50A
Features and Benefits:
TO252
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
SSFM3008L
SSSSFMM33000088L
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high
cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in power switching application
and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
50
40
200
100
0.55
30
± 20
100
44
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com
Version: 1.0
page 1 of 8
1 page  
Typical thermal characteristics
SSFM3008L
1000
100
Ron limited
10
DC
1
Tj(max)=175℃ Tc=25℃
10uS
100uS
1mS
10mS
0.1
0.01
0.1 1
10
VDS,drain to source voltage(V)
100
200
180
160
140
120
100
80
60
40
20
0
0.0001
0.001
Tj(max)=175℃
Ta=25℃
0.01 0.1
Pulse Width (s)
1
10
Figure 7: Maximum Forward Biased Safe
Operating Area
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 9: Power De-rating
Figure 8: Single Pulse Power Rating
Junction-to-Case
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 10: Current De-rating
10
Duty cycle D=
0.5,0.3,0.1,0.05,0.01,single
1
t
tp D=tp/t
0.1
TJ（max）＝PDM*ZθJC*RθJC+TC
RθJC=2.5℃/W
0.01
0.00001 0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
Figure 11: Normalized Thermal transient Impedance Curve
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com
Version:1.0
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSFM3008L.PDF ] | |
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