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PDF SSFM3008H1 Data sheet ( Hoja de datos )

Número de pieza SSFM3008H1
Descripción MOSFET ( Transistor )
Fabricantes Silikron 
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Main Product Characteristics:
SSFM3008H1 
VDSS
30V
RDS(on) 7.4mohm(typ.)
SSFM3008H1
ID 20A
SOP-8 
Features and Benefits:
„ Advanced trench MOSFET process technology
„ Special designed for PWM, load switching and
general purpose applications
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 175operating temperature
Marking and pin
Assignment 
Schematic diagram 
 
 
 
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high
cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in power switching application
and a wide variety of other applications 
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
20
16
136
3.1
30
± 20
100
44
-55 to + 175
Units
A
W
V
V
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t 10s)
Junction-to-Ambient (PCB mounted, steady-state)
Typ.
Max.
22
35
65
Units
/W
/W
/W
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com 
Version: 1.0
page 1 of 8

1 page




SSFM3008H1 pdf
                                
Typical thermal characteristics
SSFM3008H1 
10
Duty cycle D=
0.5,0.3,0.1,0.05,0.01,single
1
t
tp D=tp/t
0.1
TJmax)=PDM*ZθJC*RθJC+TC
RθJC=2.5/W
0.01
0.00001 0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
Figure 7: Normalized Thermal transient Impedance Curve
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com 
Version:1.0
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