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PDF SSF7504A Data sheet ( Hoja de datos )
| Número de pieza | SSF7504A | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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SSF7504A
Feathers:
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
Description:
The SSF7504A is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 2.7mohm.
Application:
Power switching application
ID=220A
BV=75V
Rdson=2.7mΩ(typ.)
SSF7504A TOP View (TO-263)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C
ID@Tc=100ْC
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
IDM Pulsed drain current ①
PD@TC=25ْC
Power dissipation
Linear derating factor
VGS
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
EAS
EAR
TJ
TSTG
Single pulse avalanche energy
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
②
Max.
220
170
880
370
2.0
±20
20
960
TBD
–55 to +175
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-case
Junction-to-ambient
Min. Typ. Max.
— 0.41 —
— — 62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
75 —
— 2.7
2.0 3.1
— 65
——
——
—V
4 mΩ
4.0 V
—S
10
μA
50
©Silikron Semiconductor CO.,LTD.
2010.5.2
Version : 1.0
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=40A
VDS=VGS,ID=250μA
VDS=5V,ID=30A
VDS=80V,VGS=0V
VDS=80V,
VGS=0V,TJ=150ْC
page 1of5
1 page  
TO-263 MECHANICAL DATA:
SSF7504A
©Silikron Semiconductor CO.,LTD.
2010.5.2
Version : 1.0
page 5of5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSF7504A.PDF ] | |
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