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PDF SSF7504 Data sheet ( Hoja de datos )
| Número de pieza | SSF7504 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
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SSF7504
Feathers:
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
Description:
The SSF7504 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 2.7mohm.
Application:
Power switching application
ID=220A
BV=75V
Rdson=2.7mΩ(typ.)
SSF7504 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100ْC
IDM
Continuous drain current,VGS@10V
Pulsed drain current ①
PD@TC=25ْC
Power dissipation
Linear derating factor
VGS
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
EAS Single pulse avalanche energy ②
EAR
TJ
TSTG
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
220
170
880
370
2.0
±20
20
960
TBD
–55 to +175
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-case
Junction-to-ambient
Min. Typ. Max.
— 0.41 —
— — 62
Electrical Characteristics @TJ=25ْ C(unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source breakdown voltage
75 —
—V
RDS(on)
Static Drain-to-Source on-resistance
— 2.7
4 mΩ
VGS(th)
Gate threshold voltage
2.0 3.1 4.0 V
gfs Forward transconductance
— 65
—S
——
10
IDSS
Drain-to-Source leakage current
——
μA
50
©Silikron Semiconductor CO.,LTD.
2010.5.2
Version : 1.0
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Units
ْC/W
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=40A
VDS=VGS,ID=250μA
VDS=5V,ID=30A
VDS=80V,VGS=0V
VDS=80V,
VGS=0V,TJ=150ْC
page 1of5
1 page  
TO220 MECHANICAL DATA:
SSF7504
©Silikron Semiconductor CO.,LTD.
2010.5.2
Version : 1.0
page 5of5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSF7504.PDF ] | |
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