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PDF SSF1007 Data sheet ( Hoja de datos )
| Número de pieza | SSF1007 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF1007 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Main Product Characteristics:
SSF1007
VDSS
RDS(on)
ID
100V
5.8mohm（Typ）
130A
Features and Benefits:
SSF1007 TOP View (TO220)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
175℃ operating temperature
High Avalanche capability and 100% tested
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an
extremely efficient and reliable device for use in power switching application and a wide variety of other
applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear derating factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH②
Avalanche Current @ L=0.3mH②
Operating Junction and Storage Temperature Range
Max.
130
91
520
258
1.7
± 20
735
75
-55 to + 175
Units
A
W
W/ Cْ
V
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Value
0.58
62
Unit
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2011.04.02
www.silikron.com
Version : 1.0
page 1of 5
1 page  
Mechanical Data：
TO220
SSF1007
©Silikron Semiconductor CO.,LTD.
2011.04.02
www.silikron.com
Version : 1.0
page 5of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSF1007.PDF ] | |
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