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Número de pieza | SSF1006H | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Silikron | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF1006H (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Main Product Characteristics:
VDSS
RDS(on)
100V
5mΩ (typ.)
ID 200A ①
Features and Benefits:
TO-247
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
SSF1006H
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
200 ①
130 ①
800
500
3.3
100
± 20
866
76
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.05.07
www.silikron.com
Version : 1.0
page 1 of 8
1 page Typical electrical and thermal characteristics
SSF1006H
Figure 5. Maximum Drain Current Vs. Case
Temperature
Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
©Silikron Semiconductor CO.,LTD.
2013.05.07
www.silikron.com
Version : 1.0
page 5 of 8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SSF1006H.PDF ] |
Número de pieza | Descripción | Fabricantes |
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