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Número de pieza | BSS84LT1 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | WILLAS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSS84LT1 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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1.0PAoSUwRFeArCEMMOOUSNFT SECTHOT1T3K0Y BmARARmIERpRsE,CT5IF0IERVSo-2l0tVs- 200V
SOD-123+ PACKAGE
FM120-M+
BSS84LTT1HRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
P•–LCowhpoawnernloessl, ShigOh eTff–ici2en3cy.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
•THhieghsesurmgeinciaaptuarbeilitys.urface mount MOSFETs reduce power loss
co•nGsuearrvderinegnfeorrgoyv,ermvoaltkaignegptrhotisecdtioenv.ice ideal for use in small power
m•aUnlatrgaehmigehn-stpceiercdusiwtryit.chTiynpgi.cal applications are dc–dc converters, load
sw• iStcilhicionnge, ppitaoxwiaelrplamnaarncahgipe,mmeentatl sinilicopnojrutanbctlieon.and battery–powered
pr•oLdeuacdt-sfrseuecpharatssmceoemt epnuvtierorsn,mpernintatel srsta,ncdealrludlsaorfand cordless telephones.
•• ERMnoIHLe-SrSgpTyrDoEd-1fufc9ict5if0eo0rnp/t2ac2k8ing code suffix "G"
• MHainloiagetunrfereeSpOroTd–u2ct3foSr uparfcakicneg cModoeusnutffPixa"Hck" age Saves Board Space
• MPeb-cFhreaenpiaccaklagdeaitsaavailable
• REpooHxSy :pUrLo9d4u-cVt0forartepdafclakminegrceotadrdeasnut ffix ”G”
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• HCaasloeg:eMnolfdreeed pplraosdticu,cSt OfoDr-1p2a3cHking code suffix “H”
•
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
SOT –230.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.0113gDrarmain
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RSiantginlegsphaat s2e5℃halfawmabvieen, t6t0e1Hmzp,ererastiusrtieveunolfeisnsd-uocthtievrewliosaeds.pecified.
For capacitive load, derateGcautrerent by 20%
RATINGS
Marking Code
2
Maximum Recurrent Peak Reverse Voltage Source
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12 13 14 15 16 Ma1r8king D1i0agram 115 120
VRRM
20
30
40
50
60
80 100 150 200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140 Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VDC 20 30
IO
40 50
60
1.0
80 100
PD
150 200 Volts
Amps
Peak
MAXIMUM
Forward Surge
RCuArrTeInNt 8G.3Sm(sTsJin=gl2e5h°aClf
suinnele-wssavoether IwFSisMe
noted)
superimposed on rated Rloaadtin(JgEDEC method)
Typical Thermal Resistance (Note 2)
Typical JDunractiino–ntoC–aSpoaucirtcaencVeo(lNtaogtee 1)
Symbol
RΘJA
CVJDSS
Value Unit
50 Vdc
OperatingGTaetem–ptoe–raStuoruercReaVngoeltage – Continuous
TVJ GS
± 20-55 to +V1d2c 5
30
40
120
PD = Device Code
M =-M55otnot+h1C50ode
Amps
℃/W
PF
℃
Storage TDermaipneCrauturrreenRt ange
– Continuous @ TA = 25°C
– PulseCdHDArRaiAnCCTuErRreISntT(ICtpS≤ 10 µs)
MaximumToFtoarlwPaordwVerolDtaisgseipaat t1io.0nA@DCTA = 25°C
MaximumOApveeraratignegRaenvderSsteorCaugrereTnet matpe@raTtuAr=e25℃
Rated DC BRloacnkgineg Voltage
@T A=125℃
TSTG
mA
- 65 to +175
℃
ID 130
SYMIBDOML
VFPD
TIJR, Tstg
FM120-5M2H0FM130-MH FM140-MH
225 m0W.50
– 55 to
150
°C
FM150-M0H.7F0M160-OMHRFDME18R0-IMN0HG.8F5MIN11F0O0-MRHMFAMT101I.O590N-MH
FM1200-MH
0.92
Dev0i.c5e
Package
Shipping
BSS8140LT1 SOT-23 3000/Tape&Reel
UNIT
Volts
mAmps
NOTES: Thermal Resistance – Junction–to–Ambient RθJA
556 °C/W
1- MeasurMedaaxtim1 uMmHZLeanaddaTpepmliepderreavteurrsee fvoorltSagoeldoefr4in.0gVDC. TL
2- Thermal RPeusirsptaonsceesF, rfoomr 1J0unsceticoonntodsAmbient
260 °C
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BSS84LT1.PDF ] |
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