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PDF BSS84LT1 Data sheet ( Hoja de datos )
| Número de pieza | BSS84LT1 | |
| Descripción | Small-Signal MOSFET | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS84LT1 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
Part of the Greenline™ Portfolio of devices with energy–conserv-
ing traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Reduced power loss conserves
energy, making this device ideal for use in small power manage-
ment circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered
products such as computers, printers, cellular and cordless
telephones.
1
• Energy Efficient
GATE
• Miniature SOT–23 Surface Mount Package Saves Board Space
™
3 DRAIN
2 SOURCE
BSS84LT1
Motorola Preferred Device
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
3
1
2
CASE 318–08, Style 21
SOT–23 (TO–236AB)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
DEVICE MARKING
BSS84LT1 = PD
Device
BSS84LT1
BSS84LT3
ORDERING INFORMATION
Reel Size
Tape Width
7″ 8mm embossed tape
13″ 8mm embossed tape
Quantity
3000
10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
50
± 20
130
520
225
– 55 to 150
556
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
4–13
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BSS84LT1.PDF ] | |
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