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PDF SI3443DV Data sheet ( Hoja de datos )
| Número de pieza | SI3443DV | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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P-Channel 2.5-V (G-S) MOSFET
Si3443DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.065 @ VGS = –4.5 V
–20 0.090 @ VGS = –2.7 V
0.100 @ VGS = –2.5 V
ID (A)
"4.4
"3.7
"3.5
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–20
"12
"4.4
"3.5
"20
–1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RthJA
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70713
S-54948—Rev. B, 29-Sep-97
Limit
62.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
1 page  
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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