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Datasheet SI3443DV Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | SI3443DV | Power MOSFET ( Transistor ) PD- 93795B
Si3443DV
HEXFET® Power MOSFET
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l -2.5V Rated
D1 D2 G3
A 6D 5D
VDSS = -20V
4 S RDS(on) = 0.065Ω
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing tech |
 International Rectifier |
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| 3 | SI3443DV | MOSFET ( Transistor ) P-Channel 2.5-V (G-S) MOSFET
Si3443DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.065 @ VGS = –4.5 V –20 0.090 @ VGS = –2.7 V
0.100 @ VGS = –2.5 V
ID (A)
"4.4 "3.7 "3.5
3 mm
TSOP-6 Top View 16 25
34
2.85 mm
(4) S (3) G
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RAT |
 Vishay |
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| 2 | SI3443DV | P-Channel 2.5V Specified PowerTrench MOSFET Si3443DV
April 2001
Si3443DV
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for sup |
 Fairchild Semiconductor |
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| 1 | SI3443DVPBF | Power MOSFET ( Transistor ) l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l -2.5V Rated l Lead-Free
D D G
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit |
International Rectifier |
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