Datasheet VN2410 Equivalent ( PDF )

VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Applications Motor controls Converters Ampli ers Switches Power supply circuits Drivers (relays, hammers, solenoids, lam

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by VN2410L, D TMOS FET Transistor N Channel Enhancement VN2410L 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C

TN2410L, VN2406D, L, VN2410L, LS Vishay Siliconix N-Channel 240-V (D-S) MOSFETs PRODUCT SUMMARY Part Number TN2410L VN2406D VN2406L VN2410L VN2410LS V(BR)DSS Min (V) 240 rDS(on) Max (W) 10 @ VGS = 4.5 V 6 @ VGS = 10 V 6 @ VGS = 10 V 10 @ VGS = 10 V 10 @ VGS = 10 V VGS(th) (V) 0.5 to 1.8 0.8 to 2 0.8 to 2 0.8 to 2 0.8 to 2 ID (A) 0.18 1.12 0.18 0.18 0.19 FEATURES D Low On-Resistance: 3.5 W D

VN2410L Small Signal MOSFET 240 V, 200 mA, N Channel TO 92 Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 μs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID IDM PD 240 Vdc 240 Vdc ±

TN2410L, VN2406D, L, VN2410L, LS Vishay Siliconix N-Channel 240-V (D-S) MOSFETs PRODUCT SUMMARY Part Number TN2410L VN2406D VN2406L VN2410L VN2410LS V(BR)DSS Min (V) 240 rDS(on) Max (W) 10 @ VGS = 4.5 V 6 @ VGS = 10 V 6 @ VGS = 10 V 10 @ VGS = 10 V 10 @ VGS = 10 V VGS(th) (V) 0.5 to 1.8 0.8 to 2 0.8 to 2 0.8 to 2 0.8 to 2 ID (A) 0.18 1.12 0.18 0.18 0.19 FEATURES D Low On-Resistance: 3.5 W D