VN2410L PDF File ( Datasheet )

VN2410L Small Signal MOSFET 240 V, 200 mA, N Channel TO 92 Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 μs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID IDM PD 240 Vdc 240 Vdc ± 20 Vdc ± 40 Vpk 200 mAdc 500 mAdc 350 mW 2.8 mW, °C Operating and Storage Temperature TJ, Tstg

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by VN2410L, D TMOS FET Transistor N Channel Enhancement VN2410L 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C VDSS VDGR 240 60 Vdc Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID 200 mAdc IDM 500 mAdc PD 350 mW 2