Datasheet UGF18060 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	UGF18060	Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB	CREE

UGF18 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
UGF18DCT	Dual Common-Cathode Ultrafast Plastic Rectifier UG(F,B)18ACT thru UG(F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB ITO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 3 2 UG1	Vishay Siliconix
UGF18ACT	Dual Common-Cathode Ultrafast Plastic Rectifier UG(F,B)18ACT thru UG(F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB ITO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 3 2 UG1	Vishay Siliconix
UGF18060	Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Am	CREE

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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