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Datasheet TSM4435B Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TSM4435B   30V P-Channel MOSFET

TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4.5V ID (A) -9.1 -6.9 Features ● ● Advance Trench Process Technology High Density Cell Design for
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet TSM4435B pdf

TSM44 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TSM4435B

30V P-Channel MOSFET

TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4.5V ID (A) -9.1 -6.9 Features ● ● Advance Trench Process Technology High Den
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor
TSM4425

30V P-Channel MOSFET

30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain TSM4425 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 12 @ VGS = -10V 19 @ VGS = -4.5V ID (A) -11 -8.5 Features ● ● Advance Trench Process
Taiwan Semiconductor Company
Taiwan Semiconductor Company		 datasheet pdf - Taiwan Semiconductor Company
TSM4435

30V P-Channel MOSFET

TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) -9.1 -6.9 Features ● ● Advance Trench Process Technology High
Taiwan Semiconductor Company
Taiwan Semiconductor Company		 datasheet pdf - Taiwan Semiconductor Company


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Número de pieza Descripción Fabricantes PDF
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