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Datasheet TPCP8107 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TPCP8107   MOSFETs

TPCP8107 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8107 1. Applications • • Motor Drivers Mobile Equipment 2. Features (1) (2) (3) (4) (5) Small, thin package Small gate charge: QSW = 14.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 13.9 mΩ (typ.) (VGS = -10 V) Low leakage current
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet TPCP8107 pdf

TPCP8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TPCP8107

MOSFETs

TPCP8107 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8107 1. Applications • • Motor Drivers Mobile Equipment 2. Features (1) (2) (3) (4) (5) Small, thin package Small gate charge: QSW = 14.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 13.9 mΩ (typ.) (VGS = -10 V)
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TPCP8111

MOSFETs

TPCP8111 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8111 1. Applications • • Motor Drivers Mobile Equipment 2. Features (1) (2) (3) (4) (5) Small, thin package Small gate charge: QSW = 5.2 nC (typ.) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -10 V) Lo
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TPCP8404

Field Effect Transistor

TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ) TPCP8404 Portable Equipment Applications Motor Drive Applications • Low drain-source ON-resistance : P Channel RDS (ON) = 38 mΩ(typ.) (VGS=−10V) N Channel RDS (ON) = 38 mΩ(typ.) �
 Toshiba
Toshiba		 datasheet pdf - Toshiba


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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