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Datasheet TK4P60D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | TK4P60D | MOSFETs TK4P60D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P60D
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 600 |
 Toshiba Semiconductor |
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| 2 | TK4P60DA | MOSFETs TK4P60DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4P60DA
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS = 10μA (max) (VDS |
Toshiba Semiconductor |
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| 1 | TK4P60DB | MOSFETs TK4P60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4P60DB
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS |
Toshiba Semiconductor |
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