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Número de pieza | TK4P60DB | |
Descripción | MOSFETs | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TK4P60DB (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TK4P60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4P60DB
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
6.6 ± 0.2
5.34 ± 0.13
0.58MAX
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
3.7
14.8
80
147
3.7
8
150
−55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1.14MAX
0.76 ± 0.12
2.29
123
1. GATE
2. DRAIN
(HEAT SINK)
3. SOURCE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max Unit
1.56 °C/W
125 °C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 18.7 mH, RG = 25 Ω, IAR = 3.7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2010-02-25
1 page rth – tw
10
TK4P60DB
1
Duty=0.5
0.2
0.1
0.1 0.05
0.01
10μ
0.02 0.01
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.56 °C/W
1m
10m
100m
1
10
Pulse width tw (s)
SAFE OPERATING AREA
100
ID max (pulsed) *
10
ID max (continuous)
1 DC operation
Tc = 25°C
100 μs *
1 ms *
0.1
0.01
* Single pulse Tc=25℃
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
100
Drain-source voltage VDS (V)
1000
EAS – Tch
200
160
120
80
40
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
0V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 18.7 mH
Waveform
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2010-02-25
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TK4P60DB.PDF ] |
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