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Datasheet TK100E06N1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TK100E06N1 | MOSFETs TK100E06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 |
Toshiba Semiconductor |
TK100E0 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TK100E08N1 | MOSFETs |
Toshiba Semiconductor |
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TK100E06N1 | MOSFETs |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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