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TIP140F |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
TIP140F, 141F, 142F
TIP140F, 141F, 142F
Monolithic Construction With Built In BaseEmitter Shunt Resistors
Complement to TIP145F, 146F, 147F High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use
1
TO-3PF 2.Collector 3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : TIP140F
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Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP140F
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min) ·Complement to Type TIP145F
APPLICATIONS ·Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
P
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SILICON PLANAR DARLINGTON POWER TRANSISTORS
Transys
Electronics
LIMITED
SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP140F, 141F, 142F NPN TIP145F, 146F, 147F PNP
TO- 3P Fully Isolated Plastic Package
B C E
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current (repetitive) Base Current Total P
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