TIP140F PDF File ( Datasheet )

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification TIP140F DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Complement to Type TIP145F APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO

Transys Electronics LIMITED SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140F, 141F, 142F NPN TIP145F, 146F, 147F PNP TO- 3P Fully Isolated Plastic Package B C E For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current (repetitive) Base Current Total Power Dissipation @ Tc <25ºC Operating And Storage Junction Temperature Range SYMBOL VCBO VCEO VEB0