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Datasheet TIM5964-30SL Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TIM5964-30SL | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM5964-30SL
TECHNICAL DATA FEATURES
n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERN |
Toshiba Semiconductor |
TIM5964-3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TIM5964-35SLA | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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TIM5964-35SLA-251 | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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TIM5964-30SL | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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