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Datasheet THNCF064MMA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | THNCF064MMA | Small Form Factor Card TENTATIVE
CompactFlash™ Card
Preliminary
THNCFxxxxMA Series
TOSHIBA SMALL FORM FACTOR CARD
DESCRIPTION
The THNCFxxxxMA series CompactFlash™ card is a flash technology based with ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type （Toshiba） fla |  Toshiba | data |
THN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | THN405Z | SiGe NPN Transistor Semiconductor
THN405Z
SiGe NPN Transistor
□ Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
SOT-343
Unit in mm
□ Features
- High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA
- High power gain |S21|2 = 15 dB  AUK transistor | | |
| 2 | THN4201 | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
THN4201 Series
SiGe NPN Transistor
SOT-523
Unit in mm
□ Features
o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 13.5 dB at f = 2 GHz, V AUK transistor | | |
| 3 | THN4201E | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
THN4201 Series
SiGe NPN Transistor
SOT-523
Unit in mm
□ Features
o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 13.5 dB at f = 2 GHz, V AUK transistor | | |
| 4 | THN4201U | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
THN4201 Series
SiGe NPN Transistor
SOT-523
Unit in mm
□ Features
o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 13.5 dB at f = 2 GHz, V AUK transistor | | |
| 5 | THN4201Z | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
THN4201 Series
SiGe NPN Transistor
SOT-523
Unit in mm
□ Features
o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 13.5 dB at f = 2 GHz, V AUK transistor | | |
| 6 | THN420Z | SiGe NPN Transistor Semiconductor
THN420Z
SiGe NPN Transistor
□ Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
SOT-343
Unit in mm
□ Features
- High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 15 mA fT = 20 GHz at VCE = 3 V, IC = 30 mA
- High power gain |S21|2 = 16 dB AUK transistor | | |
| 7 | THN4301 | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, I AUK transistor | | |
| 8 | THN4301E | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, I AUK transistor | | |
| 9 | THN4301U | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, I AUK transistor | |
| Esta página es del resultado de búsqueda del THNCF064MMA. Si pulsa el resultado de búsqueda de THNCF064MMA se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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