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Datasheet THN4301 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | THN4301 | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, I |
 AUK |
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| 3 | THN4301E | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, I |
AUK |
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| 2 | THN4301U | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, I |
AUK |
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| 1 | THN4301Z | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, I |
AUK |
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