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Datasheet SI8410DB Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SI8410DB   N-Channel 20 V (D-S) MOSFET

Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 0.037 at VGS = 4.5 V 20 0.041 at VGS = 2.5 V 0.047 at VGS = 1.8 V 0.068 at VGS = 1.5 V ID (A) a 5.7 5.4 5.0 4.2 5.9 nC Qg (TYP.) FEATURES • TrenchFET® power MOSFET • Ultra small 1
Vishay
Vishay		 datasheet SI8410DB pdf

SI841 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SI8410

(SI8410 - SI8421) SINGLE & DUAL-CHANNEL DIGITAL ISOLATORS

Si8410/20/21 S I N G L E & D U A L - C H A N N E L D I G I TA L I S O L A T O R S Features High-speed operation DC – 150 Mbps 2500 VRMS isolation Transient Immunity >25 kV/µs Pin Assignments Low propagation delay <10 ns Narrow Body SOIC Si841x VDD1 A1 VDD1 GND1 Wide Opera
 Silicon Laboratories
Silicon Laboratories		 datasheet pdf - Silicon Laboratories
SI8410DB

N-Channel 20 V (D-S) MOSFET

Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 0.037 at VGS = 4.5 V 20 0.041 at VGS = 2.5 V 0.047 at VGS = 1.8 V 0.068 at VGS = 1.5 V ID (A) a 5.7 5.4 5.0 4.2 5.9 nC Qg (TYP.) FEATURES • TrenchFET® power MOSFE
 Vishay
Vishay		 datasheet pdf - Vishay
SI8419DB

P-Channel 1.5-V (G-S) MOSFET

Si8419DB New Product Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.035 @ VGS = −4.5 V −8 0.042 @ VGS = −2.5 V 0.052 @ VGS = −1.8 V 0.069 @ VGS = −1.5 V FEATURES ID (A)a −11.7 −10.7 −9.6 −8.3 21 nC Qg
 Vishay Siliconix
Vishay Siliconix		 datasheet pdf - Vishay Siliconix


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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