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PDF Si8419DB Data sheet ( Hoja de datos )
| Número de pieza | Si8419DB | |
| Descripción | P-Channel 1.5-V (G-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
P-Channel 1.5-V (G-S) MOSFET
Si8419DB
Vishay Siliconix
www.DataSheet4U.com
PRODUCT SUMMARY
VDS (V)
−8
rDS(on) (W)
0.035 @ VGS = −4.5 V
0.042 @ VGS = −2.5 V
0.052 @ VGS = −1.8 V
0.069 @ VGS = −1.5 V
ID (A)a
−11.7
−10.7
−9.6
−8.3
Qg (Typ)
21 nC
FEATURES
D TrenchFETr Power MOSFET
Product Is
Completely
D Industry First 1.5-V Rated MOSFET
Pb-free
D Ultra Small MICRO FOOTr Chipscale Packaging
Reduces Footprint Area, Profile (0.62 mm) and
On-Resistance Per Footprint Area
APPLICATIONS
D Low Threshold Load Switch for Portable Devices
− Low Power Consumption
− Increased Battery Life
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8419
xxx
S
4
G
1
S
Device Marking: 8419
xxx = Date/Lot Traceability Code
Ordering Information: Si8419DB-T1—E1
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditionsd
TC = 25_C
TC = 70_C
TA = 25_C
TA = 70_C
TC = 25_C
TA = 25_C
TC = 25_C
TC = 70_C
TA = 25_C
TA = 70_C
VPR
IR/Convection
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
−8
"5
−11.7
−9.4
−7.8b, c
−6.3b, c
−25
−5.7
−2.5b, c
6.25
4
2.77b, c
1.77b, c
−55 to 150
260
260
Notes:
a. Based on TC = 25_C.
b. Surface Mounted on 1” x 1” FR4 Board.
c. t = 10 sec
d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Document Number: 73310
s-50341—Rev. A, 28-Feb-05
Unit
V
A
W
_C
www.vishay.com
1
1 page  
New Product
Si8419DB
Vishay Siliconix
www.DataSheet4U.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
10
On-Resistance vs. Gate-to-Source Voltage
0.08
0.07
ID = 1 A
0.06
0.05
0.04
TA = 25_C
TA = 125_C
TJ = 150_C
TJ = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD − Source-to-Drain Voltage (V)
0.03
0.02
0
1234
VGS − Gate-to-Source Voltage (V)
5
Threshold Voltage
0.8
0.7
ID = 250 mA
0.6
Single Pulse Power, Juncion-To-Ambient
80
60
0.5 40
0.4
20
0.3
0.2
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
0.001 0.01
0.1 1 10
Time (sec)
Safe Operating Area, Junction-to-Ambient
100
*Limited by rDS(on)
IDM Limited
100 600
10 P(t) = 0.0001
Document Number: 73310
s-50341—Rev. A, 28-Feb-05
1
ID(on)
Limited
0.1 TA = 25_C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 10
P(t) = 1
dc
0.01
BVDSS Limited
0.1 1
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
10
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Si8419DB.PDF ] | |
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