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Datasheet SW6888 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SW6888 | FingerPrint Sensor
Fingerprint Sensor IC SW6888 Protective Coating user guide
Version 0.1
Symwave, Inc 10180 Telesis Court, 3rd Floor San Diego, CA 92121 Phone: (858) 450-2845 Fax: (858) 453-1797 [email protected]
Symwave Technologies (Shenzhen) Co., Ltd. Rm. 401, #8 Building, Software Park, Ke- |  Symwave | sensor |
SW6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | SW601Q | MOSFET, Transistor SAMWIN
SW601Q
Features
■ RDS(ON) (Max 700Ω)@VGS=0V,ID=3mA ■ High Switching Speed
General Description
N-channel SOT-23 MOSFET
SOT-23 3
1 2
BVDSS : 600V ID : 0.185A RDS(ON) : 700Ω
3
1. Source 2. Gate 3. Drain
2 1
The SW601Q is an N-channel power MOSFET using SAMWIN’s Advanced technolo |  SEMIPOWER |  |
| 2 | SW60N06T | MOSFET, Transistor SAMWIN
SW60N06T
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max8mΩ)@VGS=10V ■ Gate Charge (Typical 77nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDM | SEMIPOWER | |
| 3 | SW6100 | BATTERY SHENZHEN SUNNYWAY BATTERY TECH CO.,LTD.
R
SW6100(6V10AH)
151 50
SW (1 2 1 2 1 0 0 V10 AH )
Nominal Voltage Rated capacity (20 hour rate) Total Height Height Dimensions Length Width Weight Approx
6V 10 Ah 100mm(3.94 inches) 94 mm(3.70 inches) 151 mm(5.94 inches) 50 mm(1.97 inc |  SUNNYWAY | |
| 4 | SW630 | N-Channel MOSFET SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W
SW630
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better chara |  Samwin | |
| 5 | SW630A | MOSFET, Transistor SAMWIN
SW630A
N-channel TO-220/D-PAK MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.4 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220
TO-252
12 3
1 2 3
BVDSS : 200V ID : 10A RDS(ON) : 0.4ohm
2
1. Gate 2. Drain 3. Source
General | SEMIPOWER | |
| 6 | SW634 | N-Channel MOSFET SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 250 V : 0.45 ohm : 8.5 A : 28 nc : 72 W
SW634
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better char | Samwin | |
| 7 | SW640 | N-Channel MOSFET SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W
SW640
This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better ch | Samwin | |
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| Número de pieza | Descripción | Fabricantes | |
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