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Datasheet STW55NE10 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 STW55NE10   N-CHANNEL MOSFET

® STW55NE10 N - CHANNEL 100V - 0.021Ω - 55A - TO247 STripFET™ POWER MOSFET TYPE STW 55NE10 s s s s s V DSS 100 V R DS(on) <0.027 Ω ID 55 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED C
 ST Microelectronics
ST Microelectronics		 datasheet STW55NE10 pdf

STW55N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STW55NM60ND

N-channel MOSFET

STW55NM60ND N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package Datasheet — production data Features Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max < 0.060 Ω ID 51 A ■ The worldwide best RDS(on) amongst the fast recove
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
STW55NE10

N-CHANNEL MOSFET

® STW55NE10 N - CHANNEL 100V - 0.021Ω - 55A - TO247 STripFET™ POWER MOSFET TYPE STW 55NE10 s s s s s V DSS 100 V R DS(on) <0.027 Ω ID 55 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC AP
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STW55NM60N

N-CHANNEL MOSFET

STW55NM60N N-channel 600 V, 0.047 Ω, 51 A, MDmesh™ II Power MOSFET TO-247 Features Type STW55NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.060 Ω ID 51 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Swi
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
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