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Datasheet STS5N150 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 STS5N150   N-CHANNEL POWER MOSFET

N-CHANNEL 150V - 0.045 Ω - 5A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET TARGET DATA TYPE STS5N150 s s s STS5N150 VDSS 150 V RDS(on) <0.06 Ω ID 5A TYPICAL RDS(on) = 0.045 Ω EXTREMELY HIGH dv/dt CAPABILITY EXTREMELY LOW GATE CHARGE DESCRIPTION This MOSFET series realized with STMicroel
 ST Microelectronics
ST Microelectronics		 datasheet STS5N150 pdf

STS5N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STS5NF60L

N - CHANNEL 60V - 0.045ohm - 5A SO-8 STripFET POWER MOSFET

® STS5NF60L N - CHANNEL 60V - 0.045Ω - 5A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS5NF60L s s V DSS 60 V R DS(on) < 0.055 Ω ID 5A s TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION Th
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STS5N15F3

Power MOSFETs

STS5N15F3 N-channel 150 V, 0.045 Ω, 5 A, SO-8 STripFET™ III Power MOSFET Features Type STS5N15F3 ■ ■ ■ VDSS 150 V RDS(on) max < 0.057 Ω ID 5A Low on-resistance Low input capacitance and gate charge Low gate input resistance SO-8 Application
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STS5NS150

N-CHANNEL POWER MOSFET

N-CHANNEL 150V - 0.075 Ω - 5A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STS5NS150 s s s s STS5NS150 VDSS 150 V RDS(on) <0.1 Ω ID 5A TYPICAL RDS(on) = 0.075 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION DESCRI
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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