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Datasheet STS2306 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | STS2306 | N-Channel Enhancement Mode Field Effect Transistor S amHop Microelectronics C orp.
S T S 2306
Apr,21 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m £[ ) Max
ID
2.8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
45 @ V G S = 4.5V 60 @ V G S =2.5V
R ugged and r |
 SamHop Microelectronics |
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| 2 | STS2306A | N-Channel Enhancement Mode Field Effect Transistor Green Product
S T S 2306A
Apr. 27 2010 V er1.1
S amHop Microelectronics C orp.
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m Ω ) Max
ID
4.5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
40 @ V G S = 4.5V 50 @ V G S = |
SamHop Microelectronics |
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| 1 | STS2306E | N-Channel Enhancement Mode Field Effect Transistor Green Product
S T S 2306E
J an. 10 2008 V er1.0
S amHop Microelectronics C orp.
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m Ω ) Max
ID
6.5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
30 @ V G S = 4.5V 40 @ V G S = |
SamHop Microelectronics |
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