|
|
PDF STS2306E Data sheet ( Hoja de datos )
| Número de pieza | STS2306E | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STS2306E (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
S T S 2306EGreen
Product
S amHop Microelectronics C orp.
J an. 10 2008 V er1.0
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ω ) Max
20V 6.5A
30 @ VGS = 4.5V
40 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
S OT-23
D
S
G
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS 20
V
Gate-S ource Voltage
VGS 10 V
Drain C urrent-C ontinuous a @ TJ=25 C
ID
6.5
A
-P ulsed b
IDM 24 A
Drain-S ource Diode Forward C urrent a
IS
1.25 A
Maximum P ower Dissipation a
PD 1.25 W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
100
C /W
1
1 page  
S TS 2306E
600
C is s
500
400
300
C oss
200
C rss
100
6
0
0 2 4 6 8 10 12
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
600
100
60
10
TD(off)
Tf
Tr
TD(on)
V DS =10V ,ID=1A
1 V G S =4.5V
1 6 10 60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
10
5
VDS =10V
4 ID=6A
3
2
1
0
012345 678
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
50
30
10
R DS(ON) Limit
1
10ms
100ms
1s
DC
0.1 VGS =10V
S ingle P ulse
0.03 TA=25 C
0.1 1
10 60
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
1
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
1000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS2306E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STS2306 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
| STS2306A | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
| STS2306E | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |