Datasheet SPN1304 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SPN1304	N-Channel Enhancement Mode MOSFET SPN1304 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	SYNC POWER

SPN1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SPN1304	N-Channel Enhancement Mode MOSFET SPN1304 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance	SYNC POWER
SPN11T10	N-Channel Enhancement Mode MOSFET SPN11T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN11T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN11T10 has been designed specifically to improve the overall eff	SYNC POWER
SPN1022S56RGB	Dual N-Channel Enhancement Mode MOSFET SPN1022 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1022 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resist	SYNC POWER

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Número de pieza	Descripción	Fabricantes	PDF
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