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Datasheet SPI10N10L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SPI10N10L   SIPMOS Power-Transistor

SPI10N10L SPP10N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID PG-TO262-3-1  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 154 10.3 V m A PG-TO220-3-1 Type SPP10N10L SPI10N10L Packag
 Infineon Technologies
Infineon Technologies		 datasheet SPI10N10L pdf

SPI10N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SPI10N10L

SIPMOS Power-Transistor

SPI10N10L SPP10N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID PG-TO262-3-1  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 154 10.3 V m A PG-TO220-3-1 Type SPP10N1
 Infineon Technologies
Infineon Technologies		 datasheet pdf - Infineon Technologies
SPI10N10

SIPMOS Power-Transistor

Preliminary data SPI10N10 SPP10N10,SPB10N10 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 170 10.3 P-TO220-3-1 V A m Type SPP10N10
 Infineon Technologies
Infineon Technologies		 datasheet pdf - Infineon Technologies
SPI10N10

SIPMOS Power-Transistor

Preliminary data SPI10N10 SPP10N10,SPB10N10 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 170 10.3 P-TO220-3-1 V
 Infineon Technologies
Infineon Technologies		 datasheet pdf - Infineon Technologies


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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