Datasheet SMP30N10 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SMP30N10	N-Channel Enhancement-Mode Transistor SMP30N10 N-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) 100 rDS(on) (W) 0.060 TO-220AB ID (A) 30 D G DRAIN connected to TAB GD S Top View S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltag	TEMIC

SMP30 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SMP30N10	N-Channel Enhancement-Mode Transistor SMP30N10 N-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) 100 rDS(on) (W) 0.060 TO-220AB ID (A) 30 D G DRAIN connected to TAB GD S Top View S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit	TEMIC
SMP30-XXX	TRISILTM ® SMP30-xxx Series TRISILTM FEATURES n n n n n BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 30 A, 10/1000 µs. JEDEC REGISTERED PACKAGE OUTLINE SMA (JEDEC DO-214AA) SCHEMATIC	STMicroelectronics
SMP3003	P-Channel Silicon MOSFET General-Purpose Switching Device Applications Ordering number : ENA1655 SMP3003 SANYO Semiconductors DATA SHEET SMP3003 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Avalanche resistance guarantee. Speciﬁcations Absolute	Sanyo Semicon Device

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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