Datasheet SIHFI9630G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SIHFI9630G	Power MOSFET ( Transistor ) IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 29 5.4 15 Single S FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to L	Vishay Siliconix

SIHFI96 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SIHFI9630G	Power MOSFET ( Transistor ) IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 29 5.4 15 Single S FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f =	Vishay Siliconix
SIHFI9640G	Power MOSFET ( Transistor ) IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 44 7.1 27 Single S FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f =	Vishay Siliconix
SIHFI9634G	Power MOSFET ( Transistor ) IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 250 VGS = - 10 V 38 8.0 18 Single S FEATURES 1.0 TO-220 FULLPAK • • • • • • • Advanced Process Technolo	Vishay Siliconix

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Número de pieza	Descripción	Fabricantes	PDF
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