Datasheet SIA811DJ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SIA811DJ	P-Channel 20-V (D-S) MOSFET SPICE Device Model SiA811DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C T	Vishay Siliconix

SIA81 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SIA811ADJ	P-Channel 20-V (D-S) MOSFET New Product SiA811ADJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.116 at VGS = - 4.5 V 0.155 at VGS = - 2.5 V 0.205 at VGS = - 1.8 V ID (A)a - 4.5 - 4.5 - 4.5 4.9 nC Qg FEATURES • Halogen-free • LITTLE FOOT	Vishay
SIA814DJ	N-Channel 30-V (D-S) MOSFET New Product SiA814DJ Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.061 at VGS = 10 V 0.072 at VGS = 4.5 V 0.110 at VGS = 2.5 V ID (A)a 4.5 4.5 4.5 Qg (Typ.) 3.2 nC FEATURES • Halogen-free • LITTLE FOOT®	Vishay
SIA811DJ	P-Channel 20-V (D-S) MOSFET SPICE Device Model SiA811DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over t	Vishay Siliconix

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Número de pieza	Descripción	Fabricantes	PDF
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