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Datasheet SI5468DC Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SI5468DC   N-Channel 30-V (D-S) MOSFET

Si5468DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.028 at VGS = 10 V 0.034 at VGS = 4.5 V ID (A)a 6 6 Qg (Typ.) 3.8 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS 1206-
 Vishay Siliconix
Vishay Siliconix		 datasheet SI5468DC pdf

SI546 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SI5468DC

N-Channel 30-V (D-S) MOSFET

Si5468DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.028 at VGS = 10 V 0.034 at VGS = 4.5 V ID (A)a 6 6 Qg (Typ.) 3.8 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested
 Vishay Siliconix
Vishay Siliconix		 datasheet pdf - Vishay Siliconix
SI5465EDC

P-Channel 12-V (D-S) MOSFET

Si5465EDC Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) --12 rDS(on) (Ω) 0.037 @ VGS = --4.5 V 0.048 @ VGS = --2.5 V 0.065 @ VGS = --1.8 V ID (A) --7.0 --6.1 --5.2 S 1206-8 ChipFETt 1 D D D D S D D G G 5.4 kΩ Marking Code LC XX Lot Traceability a
 Vishay Siliconix
Vishay Siliconix		 datasheet pdf - Vishay Siliconix
SI5463EDC

P-Channel 20-V (D-S) MOSFET

Si5463EDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.062 @ VGS = --4.5 V --20 20 0.068@ VGS = --3.6 V 0.085 @ VGS = --2.5 V 0.120 @ VGS = --1.8 V ID (A) --5.1 --4.9 --4.4 --3.7 S 1206-8 ChipFETt 1 D D D D S D D G G 5.4 kΩ Marking C
 Vishay Siliconix
Vishay Siliconix		 datasheet pdf - Vishay Siliconix


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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