Datasheet SI4435DYPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SI4435DYPBF	HEXFET Power MOSFET PD- 95133 Si4435DYPbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S 1 8 A D D D D S S G 2 7 VDSS = -30V RDS(on) = 0.020Ω 3 6 4 5 Description These P-channel HEXFET® Power MOSFETs from	International Rectifier

SI4435DY Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SI4435DY	30V P-Channel PowerTrench MOSFET SI4435DY October 2001 SI4435DY 30V P-Channel PowerTrench® MOSFET General Description This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of g	Fairchild Semiconductor
SI4435DYPBF	HEXFET Power MOSFET PD- 95133 Si4435DYPbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S 1 8 A D D D D S S G 2 7 VDSS = -30V RDS(on) = 0.020Ω 3 6 4 5 Description These P-channel HEXFET	International Rectifier
SI4435DY	Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm PD- 93768A Si4435DY HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 7 A D D D D S S G 2 VDSS = -30V RDS(on) = 0.020Ω 3 6 4 5 Description These P-channel HEXFET® Power MOSFETs from International R	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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