Datasheet SI3495DV Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SI3495DV	P-Channel 20-V (D-S) MOSFET SPICE Device Model Si3495DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range �	Vishay Siliconix

SI349 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SI3493BDV	P-Channel 20-V (D-S) MOSFET New Product Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.0275 at VGS = - 4.5 V - 20 0.034 at VGS = - 2.5 V 0.045 at VGS = - 1.8 V ID (A) - 8.0a - 7.9 - 2.2 26.2 nC Qg (Typ) FEATURES • TrenchFET® Power MO	Vishay Siliconix
SI3493DV	P-Channel 20-V (D-S) MOSFET Si3493DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.027 @ VGS = −4.5 V −20 0.035 @ VGS = −2.5 V 0.048 @ VGS = −1.8 V FEATURES ID (A) −7 −6.2 −5.2 21 Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance	Vishay Siliconix
SI3499DV	P-Channel 1.5-V (G-S) MOSFET Si3499DV New Product Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.023 @ VGS = −4.5 V −8 0.029 @ VGS = −2.5 V 0.036 @ VGS = −1.8 V 0.048 @ VGS = −1.5 V FEATURES ID (A) −7 −6.2 −5.2 −5.0 28 Qg (Typ)	Vishay Siliconix

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Número de pieza	Descripción	Fabricantes	PDF
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