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PDF SI3493BDV Data sheet ( Hoja de datos )
| Número de pieza | SI3493BDV | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
P-Channel 20-V (D-S) MOSFET
Si3493BDV
wVwwis.DhaataySheSeitl4iUc.coonmix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.0275 at VGS = - 4.5 V
- 20 0.034 at VGS = - 2.5 V
0.045 at VGS = - 1.8 V
ID (A)
- 8.0a
- 7.9
- 2.2
Qg (Typ)
26.2 nC
TSOP-6
Top View
FEATURES
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
APPLICATIONS
• Load Switch
• PA Switch
• Battery Switch
(4) S
16
3 mm
25
34
2.85 mm
Marking Code
AK XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3493BDV-T1-E3 (Lead (Pb)-free)
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 20
± 8.0
- 8.0a
- 7.03
- 7.0b, c
- 5.8b, c
- 25
- 2.48
- 1.73b, c
2.97
1.9
2.08b, c
1.33b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 90 °C/W.
Symbol
RthJA
RthJF
Typical
50
35
Maximum
60
42
RoHS
COMPLIANT
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74478
S-70537-Rev. A, 26-Mar-07
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
4
Si3493BDV
wVwwis.DhaatayShSeeitl4iUc.coonmix
8
Package Limited
6
4
2
3
2
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74478
S-70537-Rev. A, 26-Mar-07
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI3493BDV.PDF ] | |
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