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Datasheet SGL60N90D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | SGL60N90D | IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance) SGL60N90D
FEATURES
* High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at IC=60A) * High Input Impedance TO-264
IGBT CO-PAK
1
APPLICATIONS
* Home Appliance - Induction Heater - IH JAR - Micro Wave Oven
C
G E
ABSOLUTE MAXIMUM RATINGS Symbol
VCES VGE IC
Characteristics
Collector |
 Fairchild Semiconductor |
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| 1 | SGL60N90DG3 | General Description SGL60N90DG3
IGBT
SGL60N90DG3
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very su |
Fairchild Semiconductor |
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