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PDF SGL60N90DG3 Data sheet ( Hoja de datos )
| Número de pieza | SGL60N90DG3 | |
| Descripción | General Description | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SGL60N90DG3
IGBT
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for induction heating applications.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.0 V @ IC = 60A
• High input impedance
• Built-in fast recovery diode
Applications
Home appliances, induction heaters, induction heating JARs, and microwave ovens.
C
GC E
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGL60N90DG3
900
± 25
60
42
120
15
180
72
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.69
2.08
25
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
1 page  
100
T = 25℃ ━━
C
T = 100℃ ------
C
10
1
0.1
0.0 0.5 1.0 1.5 2.0 2.5
Forward Voltage, VFM [V]
Fig 13. Forward Characteristics
3.0
1.6
di/dt = -20A/㎲
1.4 TC = 25℃
1.2
1.0
trr
0.8
0.6 Irr
0.4
0.2
0.0
10
20 30 40 50
Forward Current, I F [A]
16
14
12
10
8
6
4
2
0
60
Fig 15. Reverse Recovery Characteristics vs.
Forward Current
250
T = 25 ℃
C
200
150
100
50
0
0.1 1 10
Reverse Voltage, VR [V]
Fig 17. Junction capacitance
100
©2002 Fairchild Semiconductor Corporation
1.2 120
IF = 60A
TC = 25℃
1.0 100
0.8
trr
0.6
80
60
0.4 40
0.2
0.0
0
20
Irr
0
40 80 120 160 200 240
di/dt [A/㎲ ]
Fig 14. Reverse Recovery Characteristics
vs. di/dt
1000
100
T = 25℃ ━━
C
T = 150℃ ------
C
10
1
0.1
0.01
1E-3
0
300 600
Reverse Voltage, VR [V]
900
Fig 16. Reverse Current vs. Reverse Voltage
SGL60N90DG3 Rev. A1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGL60N90DG3.PDF ] | |
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