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Datasheet RJK03R4DPA Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | RJK03R4DPA | Built in SBD Dual N-channel Power MOS FET Preliminary Datasheet
RJK03R4DPA
MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
R07DS0888EJ0110 Rev.1.10
Oct 29, 2012
Features
Low on-resistance Capable of 4.5 V gate drive High density mounting Pb |
Renesas Technology |
RJK03R4 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJK03R4DPA | Built in SBD Dual N-channel Power MOS FET |
Renesas Technology |
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Número de pieza | Descripción | Fabricantes | |
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