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Datasheet PTF180101 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | PTF180101 | LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz PTF180101
LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz
Description
The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime an |
 Infineon Technologies AG |
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| 1 | PTF180101S | LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz PTF180101
LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz
Description
The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime an |
Infineon Technologies AG |
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