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PDF PTF180101S Data sheet ( Hoja de datos )
| Número de pieza | PTF180101S | |
| Descripción | LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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PTF180101
LDMOS RF Power Field Effect Transistor
10 W, 1805–1880 MHz, 1930–1990 MHz
10 W, 2110–2170 MHz
Description
Features
The PTF180101 is a 10 W, internally–matched GOLDMOS FET device in-
tended for EDGE applications in the DCS/PCS band. Full gold metallization
ensures excellent device lifetime and reliability.
•
EDGE EVM Performance
EVM and Efficiency vs. Output Power
VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz
4 40
Ef f icienc y
3 30
•
•
2 20
1 10
EVM
00
25 30 35 40
Output Power (dBm)
•
•
•
•
ESD: Electrostatic discharge sensitive device — observe handling precautions!
Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = –45 dBc
Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 50%
Integrated ESD protection:
Human Body Model Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
PTF180101S
Package 32259
RF Characteristics, EDGE Operation at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
Gps
ηD
Min
—
—
—
—
—
Typ
1.1
–60
–70
19
28
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
Symbol Min Typ
Gps
ηD
IMD
18 19
30 33
— –30
Max
—
—
–28
Units
dB
%
dBc
1 2004-02-03
1 page  
PTF180101
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 0.18 A, f1 = 1990 MHz, f2 = 1991 MHz
-20
-30
3rd Order
-40
-50
-60 5th
-70
7th
-80
30 32 34 36 38 40
Output Power, PEP (dBm)
42
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.04
1.03
1.02
1.01
1.00
0.99
0.05 A
0.28 A
0.51 A
0.74 A
0.97 A
1.20 A
0.98
0.97
0.96
-20 0 20 40 60 80 100
Case Temperature (°C)
Typical Performance, WCDMA Operation
Two–Tone Drive–up
VDD = 28V, IDQ = 135 mA, f = 2170 MHz,
tone spacing = 1 MHz
-20 40
-25
Ef f ic iency
35
-30 30
-35 25
-40 20
-45
-50 IM3
15
10
-55 5
-60 0
20 25 30 35 40 45
Output Power (dBm), PEP
Single–Carrier WCDMA Drive–Up
VDD = 28 V, IDQ = 135 mA, f = 2170 MHz,
3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67%
clipping, P/A R = 8.7 dB, 3.84 MHz bandwidth
-35 25
-40
-45
ACPR
-50
Ef f icienc y
20
15
10
-55 5
-60
17
22 27 32
Average Output Power (dBm)
0
37
Data Sheet 5 2004-02-03
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTF180101S.PDF ] | |
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| PTF180101 | LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz | Infineon Technologies AG |
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