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Datasheet P9NC60FP Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1P9NC60FP STP9NC60FP

® STP9NC60 STP9NC60FP N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH™ ΙΙ MOSFET T YPE V DSS 600 V 600 V R DS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 5.2 A STP9NC60 STP9NC60FP ν ν ν ν ν TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE
STMicroelectronics
STMicroelectronics
data


P9N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1P9N70SSFP9N70

SSFP9N70 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of
Good-Ark
Good-Ark
datasheet P9N70 pdf
2P9NB50FPSTP9NB50FP

N-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP9NB50 STP9NB50FP s s s s s STP9NB50 STP9NB50FP VDSS 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8.6 A 4.9 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY L
STMicroelectronics
STMicroelectronics
datasheet P9NB50FP pdf
3P9NB60FP STP9NB60FP

® STP9NB60 STP9NB60FP N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH™ MOSFET TYPE ST P9NB60 ST P9NB60FP s s s s s V DSS 600 V 600 V R DS(on) < 0.8 Ω < 0.8 Ω ID 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACIT
ST Microelectronics
ST Microelectronics
datasheet P9NB60FP pdf
4P9NC60 STP9NC60

N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP9NC60 STP9NC60FP s s s s s STP9NC60 STP9NC60FP VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW H
ST Microelectronics
ST Microelectronics
datasheet P9NC60 pdf
5P9NC60FP STP9NC60FP

® STP9NC60 STP9NC60FP N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH™ ΙΙ MOSFET T YPE V DSS 600 V 600 V R DS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 5.2 A STP9NC60 STP9NC60FP ν ν ν ν ν TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE
STMicroelectronics
STMicroelectronics
datasheet P9NC60FP pdf
6P9NC65FP STP9NC65FP

N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP9NC65 STP9NC65FP s s s s s STP9NC65 STP9NC65FP VDSS 650 V 650 V RDS(on) < 0.90 Ω < 0.90 Ω ID 8A 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTA
ST Microelectronics
ST Microelectronics
datasheet P9NC65FP pdf
7P9NK50Z STP9NK50Z

www.DataSheet.co.kr STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™ MOSFET TYPE STP9NK50Z STP9NK50ZFP STB9NK50Z STB9NK50Z-1 s s s s s s VDSS 500 500 500 500 V V V V RDS(on) < 0.85 Ω < 0.85 Ω < 0.85 Ω < 0.85 �
STMicroelectronics
STMicroelectronics
datasheet P9NK50Z pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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