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Datasheet P7NB60FP Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1P7NB60FP STP7NB60FP

STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 7.2 A 4.1 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITAN
ST Microelectronics
ST Microelectronics
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P7N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1P7N06 MTP7N06

www.Da
Motorola Semiconductor
Motorola Semiconductor
datasheet P7N06 pdf
2P7N60BHGTP7N60B

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 File Number 4412.2 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These
Intersil Corporation
Intersil Corporation
datasheet P7N60B pdf
3P7N80FQP7N80

   QFET   $ $ $ $ $ $ % %&'(()*+, -Ω.)+,() /   0 1( 2 /0 ,32     ,((4 !  5 !!6  "                  
Fairchild Semiconductor
Fairchild Semiconductor
datasheet P7N80 pdf
4P7N80C FQP7N80C

FQP7N80C/FQPF7N80C QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-sta
Fairchild Semiconductor
Fairchild Semiconductor
datasheet P7N80C pdf
5P7NA40 STP7NA40

STP7NA40 STP7NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA40 STP7NA40FI s s s s s s s V DSS 400 V 400 V R DS( on) < 1Ω < 1Ω ID 6.5 A 4.1 A TYPICAL RDS(on) = 0.82 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANC
ST Microelectronics
ST Microelectronics
datasheet P7NA40 pdf
6P7NA60FISTP7NA60FI

STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 7NA 60 ST P 7NA 60 F I VDSS 600 V 600 V R DS( on) <1Ω <1Ω ID 7.2 A 4.4 A s TYPICAL RDS(on) = 0.92 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LO
STMicroelectronics
STMicroelectronics
datasheet P7NA60FI pdf
7P7NB60 STP7NB60FP

STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 7.2 A 4.1 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITAN
ST Microelectronics
ST Microelectronics
datasheet P7NB60 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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