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Datasheet P5NK80Z Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1P5NK80ZSTP5NK80Z

STP5NK80Z STP5NK80ZFP N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET General features Type VDSS (@Tjmax) 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.3 A 4.3 A 3 1 2 STP5NK80Z STP5NK80ZFP ■ ■ ■ ■ 100% avalanche tested Gate
STMicroelectronics
STMicroelectronics
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P5N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1P5N50 IXTP5N50P

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTA 5N50P IXTP 5N50P IXTY 5N50P VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25
IXYS Corporation
IXYS Corporation
datasheet P5N50 pdf
2P5N50C5 Ampere 500 Volt N-Channel MOSFET

P5N50C ® Pb Free Plating Product P5N50C 5 Ampere 500 Volt N-Channel MOSFET { ̻ Pb Features ̰ ̰ ̰ ̰ ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested ඔ 2. Drain BVDSS = 500V ̵ 1. Gate { RDS(ON) = 1.5 ohm I
Thinki Semiconductor
Thinki Semiconductor
datasheet P5N50C pdf
3P5N60FISTP5N60FI

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
STMicroelectronics
STMicroelectronics
datasheet P5N60FI pdf
4P5N80FQP5N80

FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state
Fairchild Semiconductor
Fairchild Semiconductor
datasheet P5N80 pdf
5P5NA60FISTP5NA60FI

STP5NA60 STP5NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA60 STP5NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1.6 Ω < 1.6 Ω ID 5.3 A 3.4 A TYPICAL RDS(on) = 1.35 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o
STMicroelectronics
STMicroelectronics
datasheet P5NA60FI pdf
6P5NA80STP5NA80

( ) STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI VDSS 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.7 A 2.8 A s TYPICAL RDS(on) = 1.8 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPET
STMicroelectronics
STMicroelectronics
datasheet P5NA80 pdf
7P5NA80FISTSTP5NA80FI

( ) STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI s s s s s s s VDSS 800 V 800 V R DS(on) < 2.4 Ω < 2.4 Ω ID 4.7 A 2.8 A TYPICAL RDS(on) = 1.8 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
ST Microelectronics
ST Microelectronics
datasheet P5NA80FI pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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